2SD1536M BJT

2SD1536M

2SD1536M BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2SD1536M
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 1 W
  • Maximum Collector-Base Voltage: 40 V
  • Maximum Collector-Emitter Voltage: 40 V
  • Maximum Emitter-Base Voltage: 5 V
  • Maximum Collector Current: 2 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 150 MHz
  • Forward Current Transfer Ratio (hFE Value): 1000
  • Collector Capacitance: 11 pF
  • Package: ATR
  • Noise Figure: -