2SD2170 BJT

2SD2170
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2SD2170 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2SD2170
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 2 W
  • SMD Transistor Code: D_DM
  • Maximum Collector-Base Voltage: 90 V
  • Maximum Collector-Emitter Voltage: 90 V
  • Maximum Emitter-Base Voltage: 6 V
  • Maximum Collector Current: 2 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 80 MHz
  • Forward Current Transfer Ratio (hFE Value): 1000
  • Collector Capacitance: 25 pF
  • Package: SC-62_MPT3
  • Noise Figure: -

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