2SD2171S BJT
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2SD2171S BJT Datasheet
- Type of Transistor: BJT
- Type Designator: 2SD2171S
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation: 2 W
- Maximum Collector-Base Voltage: 30 V
- Maximum Collector-Emitter Voltage: 25 V
- Maximum Emitter-Base Voltage: 12 V
- Maximum Collector Current: 1.2 A
- Maximum Operating Junction Temperature: 150 °C
- Transition Frequency: 200 MHz
- Forward Current Transfer Ratio (hFE Value): 820
- Collector Capacitance: 20 pF
- Package: SPT
- Noise Figure: -