2SD2213 BJT

2SD2213
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2SD2213 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2SD2213
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 0.9 W
  • Maximum Collector-Base Voltage: 150 V
  • Maximum Collector-Emitter Voltage: 80 V
  • Maximum Emitter-Base Voltage: 8 V
  • Maximum Collector Current: 1.5 A
  • Maximum Operating Junction Temperature: 150 °C
  • Forward Current Transfer Ratio (hFE Value): 1000
  • Package: TO-92MOD
  • Noise Figure: -

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