2SD2219 BJT
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2SD2219 BJT Datasheet
- Type of Transistor: BJT
- Type Designator: 2SD2219
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation: 25 W
- Maximum Collector-Base Voltage: 60 V
- Maximum Collector-Emitter Voltage: 30 V
- Maximum Emitter-Base Voltage: 6 V
- Maximum Collector Current: 12 A
- Maximum Operating Junction Temperature: 150 °C
- Transition Frequency: 120 MHz
- Forward Current Transfer Ratio (hFE Value): 70
- Package: TO-220ML
- Noise Figure: -