2SD2259 BJT

2SD2259 2SD2259
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2SD2259 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2SD2259
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 1 W
  • Maximum Collector-Base Voltage: 20 V
  • Maximum Collector-Emitter Voltage: 20 V
  • Maximum Emitter-Base Voltage: 15 V
  • Maximum Collector Current: 0.7 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 55 MHz
  • Forward Current Transfer Ratio (hFE Value): 1000
  • Collector Capacitance: 10 pF
  • Package: MT2
  • Noise Figure: -

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