2SD2285 BJT

2SD2285 2SD2285

2SD2285 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2SD2285
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 40 W
  • Maximum Collector-Base Voltage: 60 V
  • Maximum Collector-Emitter Voltage: 30 V
  • Maximum Emitter-Base Voltage: 6 V
  • Maximum Collector Current: 20 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 120 MHz
  • Forward Current Transfer Ratio (hFE Value): 70
  • Package: TO-3PML
  • Noise Figure: -