2SD2358 BJT
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2SD2358 BJT Datasheet
- Type of Transistor: BJT
- Type Designator: 2SD2358
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation: 1 W
- Maximum Collector-Base Voltage: 10 V
- Maximum Collector-Emitter Voltage: 10 V
- Maximum Emitter-Base Voltage: 5 V
- Maximum Collector Current: 1 A
- Maximum Operating Junction Temperature: 150 °C
- Transition Frequency: 120 MHz
- Forward Current Transfer Ratio (hFE Value): 200
- Collector Capacitance: 30 pF
- Package: MT2
- Noise Figure: -