2SD2375 BJT

2SD2375 2SD2375

2SD2375 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2SD2375
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 25 W
  • Maximum Collector-Base Voltage: 80 V
  • Maximum Collector-Emitter Voltage: 60 V
  • Maximum Emitter-Base Voltage: 6 V
  • Maximum Collector Current: 3 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 20 MHz
  • Forward Current Transfer Ratio (hFE Value): 500
  • Package: TO-220D-A1
  • Noise Figure: -