2SD2382 BJT

2SD2382 2SD2382

2SD2382 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 2SD2382
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 30 W
  • Maximum Collector-Base Voltage: 65 V
  • Maximum Collector-Emitter Voltage: 65 V
  • Maximum Emitter-Base Voltage: 6 V
  • Maximum Collector Current: 6 A
  • Maximum Operating Junction Temperature: 150 °C
  • Forward Current Transfer Ratio (hFE Value): 700
  • Package: TO220F_FM20
  • Noise Figure: -