423 BJT

423 423

423 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: 423
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 125 W
  • Maximum Collector-Base Voltage: 400 V
  • Maximum Collector-Emitter Voltage: 325 V
  • Maximum Emitter-Base Voltage: 5 V
  • Maximum Collector Current: 7 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 4 MHz
  • Forward Current Transfer Ratio (hFE Value): 40
  • Package: TO3
  • Noise Figure: -