BU3150 BJT

BU3150 BU3150
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BU3150 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: BU3150
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 50 W
  • Maximum Collector-Base Voltage: 1100 V
  • Maximum Collector-Emitter Voltage: 800 V
  • Maximum Emitter-Base Voltage: 9 V
  • Maximum Collector Current: 3 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 4 MHz
  • Forward Current Transfer Ratio (hFE Value): 15
  • Package: TO-220A
  • Noise Figure: -

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