C1 BJT

C1 C1
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C1 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: C1
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 0.825 W
  • Built in Bias Resistor R1: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● Epitaxial Planar Die Construction ● Built-In Biasing Resistors, R1 = R2 1 2 ● Complementary PNP Types Available +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.IN (B) 2.GND (E) 3.OUT (C) OU
  • Maximum Collector-Base Voltage: 20 V
  • Maximum Collector-Emitter Voltage: 20 V
  • Maximum Emitter-Base Voltage: 3 V
  • Maximum Collector Current: 1 A
  • Maximum Operating Junction Temperature: 150 °C
  • Forward Current Transfer Ratio (hFE Value): 150
  • Package: TO92
  • Noise Figure: -

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