C2 BJT
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C2 BJT Datasheet
- Type of Transistor: BJT
- Type Designator: C2
- Material of Transistor: Si
- Polarity: PNP
- Maximum Collector Power Dissipation: 0.625 W
- Maximum Collector-Base Voltage: 20 V
- Maximum Collector-Emitter Voltage: 20 V
- Maximum Collector Current: 1 A
- Maximum Operating Junction Temperature: 150 °C
- Forward Current Transfer Ratio (hFE Value): 150
- Package: TO92
- Noise Figure: -