C5 BJT

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C5 BJT Datasheet
- Type of Transistor: BJT
- Type Designator: C5
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation: 0.15 W
- Maximum Collector-Base Voltage: 50 V
- Maximum Collector-Emitter Voltage: 45 V
- Maximum Emitter-Base Voltage: 3 V
- Maximum Collector Current: 0.03 A
- Maximum Operating Junction Temperature: 125 °C
- Transition Frequency: 100 MHz
- Forward Current Transfer Ratio (hFE Value): 135
- Package: SOT23
- Noise Figure: -