C5198 BJT

C5198 C5198
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C5198 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: C5198
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 100 W
  • Maximum Collector-Base Voltage: 160 V
  • Maximum Collector-Emitter Voltage: 160 V
  • Maximum Emitter-Base Voltage: 5 V
  • Maximum Collector Current: 10 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 30 MHz
  • Forward Current Transfer Ratio (hFE Value): 55
  • Collector Capacitance: 220 pF
  • Package: TO-3PN
  • Noise Figure: -