C6 BJT

C6 C6
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C6 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: C6
  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation: 0.15 W
  • Maximum Collector-Base Voltage: 50 V
  • Maximum Collector-Emitter Voltage: 45 V
  • Maximum Collector Current: 0.03 A
  • Maximum Operating Junction Temperature: 125 °C
  • Transition Frequency: 100 MHz
  • Forward Current Transfer Ratio (hFE Value): 200
  • Noise Figure: -<div id="content2"><p> <a href=https

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