C63 BJT


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C63 BJT Datasheet
- Type of Transistor: BJT
- Type Designator: C63
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation: 0.36 W
- Maximum Collector-Base Voltage: 50 V
- Maximum Collector-Emitter Voltage: 35 V
- Maximum Operating Junction Temperature: 175 °C
- Transition Frequency: 250 MHz
- Forward Current Transfer Ratio (hFE Value): 35
- Collector Capacitance: 3 pF
- Package: TO18
- Noise Figure: -