C63 BJT

C63 C63
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C63 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: C63
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 0.36 W
  • Maximum Collector-Base Voltage: 50 V
  • Maximum Collector-Emitter Voltage: 35 V
  • Maximum Operating Junction Temperature: 175 °C
  • Transition Frequency: 250 MHz
  • Forward Current Transfer Ratio (hFE Value): 35
  • Collector Capacitance: 3 pF
  • Package: TO18
  • Noise Figure: -