C7 BJT
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C7 BJT Datasheet
- Type of Transistor: BJT
- Type Designator: C7
- Material of Transistor: Si
- Polarity: PNP
- Maximum Collector Power Dissipation: 0.15 W
- Maximum Collector-Base Voltage: 50 V
- Maximum Collector-Emitter Voltage: 45 V
- Maximum Collector Current: 0.03 A
- Maximum Operating Junction Temperature: 125 °C
- Transition Frequency: 100 MHz
- Forward Current Transfer Ratio (hFE Value): 300
- Noise Figure: -<div id="content2"><p> <a href=https