CFD1264P BJT

CFD1264P CFD1264P
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CFD1264P BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: CFD1264P
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 30 W
  • Maximum Collector-Base Voltage: 200 V
  • Maximum Collector-Emitter Voltage: 150 V
  • Maximum Emitter-Base Voltage: 6 V
  • Maximum Collector Current: 2 A
  • Maximum Operating Junction Temperature: 150 °C
  • Forward Current Transfer Ratio (hFE Value): 100
  • Package: TO-220FP
  • Noise Figure: -

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