CFD1275Q BJT
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CFD1275Q BJT Datasheet
- Type of Transistor: BJT
- Type Designator: CFD1275Q
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation: 35 W
- Maximum Collector-Base Voltage: 60 V
- Maximum Collector-Emitter Voltage: 60 V
- Maximum Emitter-Base Voltage: 5 V
- Maximum Collector Current: 2 A
- Maximum Operating Junction Temperature: 150 °C
- Forward Current Transfer Ratio (hFE Value): 2000
- Package: TO-220FP
- Noise Figure: -