CFD1275Q BJT

CFD1275Q CFD1275Q

CFD1275Q BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: CFD1275Q
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 35 W
  • Maximum Collector-Base Voltage: 60 V
  • Maximum Collector-Emitter Voltage: 60 V
  • Maximum Emitter-Base Voltage: 5 V
  • Maximum Collector Current: 2 A
  • Maximum Operating Junction Temperature: 150 °C
  • Forward Current Transfer Ratio (hFE Value): 2000
  • Package: TO-220FP
  • Noise Figure: -