CJD110 BJT

CJD110 CJD110
TransistorData.com is not an official representative or the creator of the BJT CJD110 Transistor. Copyrighted materials belong to their respective owners. Please Note: Users can download the official CJD110 transistor datasheet in PDF, pin diagram, pnp pinout circuit and equivalent transistor data.

CJD110 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: CJD110
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 20 W
  • Maximum Collector-Base Voltage: 60 V
  • Maximum Collector-Emitter Voltage: 60 V
  • Maximum Emitter-Base Voltage: 5 V
  • Maximum Collector Current: 4 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 25 MHz
  • Forward Current Transfer Ratio (hFE Value): 1000
  • Collector Capacitance: 100 pF
  • Package: TO-252_DPAK
  • Noise Figure: -

Top CJD110 Equivalent Transistors