CJD3439 BJT


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CJD3439 BJT Datasheet
- Type of Transistor: BJT
- Type Designator: CJD3439
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation: 15 W
- Maximum Collector-Base Voltage: 450 V
- Maximum Collector-Emitter Voltage: 350 V
- Maximum Emitter-Base Voltage: 5 V
- Maximum Collector Current: 0.3 A
- Maximum Operating Junction Temperature: 150 °C
- Transition Frequency: 15 MHz
- Forward Current Transfer Ratio (hFE Value): 15
- Collector Capacitance: 10 pF
- Package: TO-252_DPAK
- Noise Figure: -