CJD81 BJT

CJD81 CJD81

CJD81 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: CJD81
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 0.9 W
  • Maximum Collector-Base Voltage: 30 V
  • Maximum Collector-Emitter Voltage: 10 V
  • Maximum Emitter-Base Voltage: 6 V
  • Maximum Collector Current: 3 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 200 MHz
  • Forward Current Transfer Ratio (hFE Value): 140
  • Collector Capacitance: 30 pF
  • Package: TO-252_DPAK
  • Noise Figure: -

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