CJD86 BJT

CJD86 CJD86
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CJD86 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: CJD86
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 1.5 W
  • Maximum Collector-Base Voltage: 60 V
  • Maximum Collector-Emitter Voltage: 50 V
  • Maximum Emitter-Base Voltage: 6 V
  • Maximum Collector Current: 3 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 150 MHz
  • Forward Current Transfer Ratio (hFE Value): 35
  • Collector Capacitance: 25 pF
  • Package: TO-252_DPAK
  • Noise Figure: -

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