CJF100 BJT

CJF100 CJF100
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CJF100 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: CJF100
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 80 W
  • Maximum Collector-Base Voltage: 60 V
  • Maximum Collector-Emitter Voltage: 60 V
  • Maximum Emitter-Base Voltage: 5 V
  • Maximum Collector Current: 8 A
  • Maximum Operating Junction Temperature: 150 °C
  • Forward Current Transfer Ratio (hFE Value): 200
  • Collector Capacitance: 200 pF
  • Package: TO-220FP
  • Noise Figure: -

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