CMBTA42 BJT

CMBTA42 CMBTA42
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CMBTA42 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: CMBTA42
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 0.25 W
  • Maximum Collector-Base Voltage: 300 V
  • Maximum Collector-Emitter Voltage: 300 V
  • Maximum Emitter-Base Voltage: 6 V
  • Maximum Collector Current: 0.5 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 50 MHz
  • Forward Current Transfer Ratio (hFE Value): 40
  • Package: SOT-23
  • Noise Figure: -

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