CP1016 BJT

CP1016 CP1016
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CP1016 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: CP1016
  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation: 60 W
  • Maximum Collector-Base Voltage: 160 V
  • Maximum Collector-Emitter Voltage: 150 V
  • Maximum Emitter-Base Voltage: 5 V
  • Maximum Collector Current: 10 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 65 MHz
  • Forward Current Transfer Ratio (hFE Value): 2000
  • Collector Capacitance: 160 pF
  • Package: TO-3
  • Noise Figure: -

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