CS9102 BJT

CS9102

CS9102 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: CS9102
  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation: 1 W
  • Maximum Collector-Base Voltage: 80 V
  • Maximum Collector-Emitter Voltage: 80 V
  • Maximum Emitter-Base Voltage: 5 V
  • Maximum Collector Current: 1 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 50 MHz
  • Forward Current Transfer Ratio (hFE Value): 40
  • Package: TO92
  • Noise Figure: -