CSA1156 BJT

CSA1156 CSA1156

CSA1156 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: CSA1156
  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation: 10 W
  • Maximum Collector-Base Voltage: 350 V
  • Maximum Collector-Emitter Voltage: 350 V
  • Maximum Emitter-Base Voltage: 7 V
  • Maximum Collector Current: 0.5 A
  • Maximum Operating Junction Temperature: 150 °C
  • Forward Current Transfer Ratio (hFE Value): 30
  • Package: TO-126
  • Noise Figure: -