CSA1156 BJT
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CSA1156 BJT Datasheet
- Type of Transistor: BJT
- Type Designator: CSA1156
- Material of Transistor: Si
- Polarity: PNP
- Maximum Collector Power Dissipation: 10 W
- Maximum Collector-Base Voltage: 350 V
- Maximum Collector-Emitter Voltage: 350 V
- Maximum Emitter-Base Voltage: 7 V
- Maximum Collector Current: 0.5 A
- Maximum Operating Junction Temperature: 150 °C
- Forward Current Transfer Ratio (hFE Value): 30
- Package: TO-126
- Noise Figure: -