CSB1086N BJT

CSB1086N CSB1086N
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CSB1086N BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: CSB1086N
  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation: 10 W
  • Maximum Collector-Emitter Voltage: 120 V
  • Maximum Collector Current: 1.5 A
  • Transition Frequency: 30 MHz
  • Forward Current Transfer Ratio (hFE Value): 56
  • Package: TO-126
  • Noise Figure: -

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