CSB1086R BJT


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CSB1086R BJT Datasheet
- Type of Transistor: BJT
- Type Designator: CSB1086R
- Material of Transistor: Si
- Polarity: PNP
- Maximum Collector Power Dissipation: 10 W
- Maximum Collector-Emitter Voltage: 120 V
- Maximum Collector Current: 1.5 A
- Transition Frequency: 30 MHz
- Forward Current Transfer Ratio (hFE Value): 180
- Package: TO-126
- Noise Figure: -