CSB1116L BJT

CSB1116L CSB1116L
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CSB1116L BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: CSB1116L
  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation: 0.75 W
  • Maximum Collector-Base Voltage: 80 V
  • Maximum Collector-Emitter Voltage: 60 V
  • Maximum Emitter-Base Voltage: 6 V
  • Maximum Collector Current: 1 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 70 MHz
  • Forward Current Transfer Ratio (hFE Value): 300
  • Collector Capacitance: 25 pF
  • Package: TO-92
  • Noise Figure: -

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