CSB1182 BJT
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CSB1182 BJT Datasheet
- Type of Transistor: BJT
- Type Designator: CSB1182
- Material of Transistor: Si
- Polarity: PNP
- Maximum Collector Power Dissipation: 10 W
- Maximum Collector-Emitter Voltage: 32 V
- Maximum Collector Current: 2 A
- Forward Current Transfer Ratio (hFE Value): 82
- Package: TO-252_DPAK
- Noise Figure: -