CSB1370D BJT

CSB1370D CSB1370D

CSB1370D BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: CSB1370D
  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation: 30 W
  • Maximum Collector-Base Voltage: 60 V
  • Maximum Collector-Emitter Voltage: 60 V
  • Maximum Emitter-Base Voltage: 5 V
  • Maximum Collector Current: 3 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 15 MHz
  • Forward Current Transfer Ratio (hFE Value): 60
  • Collector Capacitance: 80 pF
  • Package: TO-220
  • Noise Figure: -