CSB1370F BJT


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CSB1370F BJT Datasheet
- Type of Transistor: BJT
- Type Designator: CSB1370F
- Material of Transistor: Si
- Polarity: PNP
- Maximum Collector Power Dissipation: 30 W
- Maximum Collector-Base Voltage: 60 V
- Maximum Collector-Emitter Voltage: 60 V
- Maximum Emitter-Base Voltage: 5 V
- Maximum Collector Current: 3 A
- Maximum Operating Junction Temperature: 150 °C
- Transition Frequency: 15 MHz
- Forward Current Transfer Ratio (hFE Value): 160
- Collector Capacitance: 80 pF
- Package: TO-220
- Noise Figure: -