CSB1436Q BJT

CSB1436Q CSB1436Q
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CSB1436Q BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: CSB1436Q
  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation: 1.5 W
  • Maximum Collector-Base Voltage: 30 V
  • Maximum Collector-Emitter Voltage: 20 V
  • Maximum Emitter-Base Voltage: 6 V
  • Maximum Collector Current: 5 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 120 MHz
  • Forward Current Transfer Ratio (hFE Value): 120
  • Collector Capacitance: 60 pF
  • Package: TO-126
  • Noise Figure: -

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