CSB1436R BJT

CSB1436R CSB1436R

CSB1436R BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: CSB1436R
  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation: 1.5 W
  • Maximum Collector-Base Voltage: 30 V
  • Maximum Collector-Emitter Voltage: 20 V
  • Maximum Emitter-Base Voltage: 6 V
  • Maximum Collector Current: 5 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 120 MHz
  • Forward Current Transfer Ratio (hFE Value): 180
  • Collector Capacitance: 60 pF
  • Package: TO-126
  • Noise Figure: -