CSB564AO BJT
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CSB564AO BJT Datasheet
- Type of Transistor: BJT
- Type Designator: CSB564AO
- Material of Transistor: Si
- Polarity: PNP
- Maximum Collector Power Dissipation: 0.8 W
- Maximum Collector-Emitter Voltage: 25 V
- Maximum Collector Current: 1 A
- Transition Frequency: 110 MHz
- Forward Current Transfer Ratio (hFE Value): 70
- Package: TO-92
- Noise Figure: -