CSB612 BJT

CSB612 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: CSB612
  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation: 2 W
  • Maximum Collector-Emitter Voltage: 120 V
  • Maximum Collector Current: 6 A
  • Transition Frequency: 100 MHz
  • Forward Current Transfer Ratio (hFE Value): 2000
  • Package: TO-220
  • Noise Figure: -