CSB649AC BJT
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CSB649AC BJT Datasheet
- Type of Transistor: BJT
- Type Designator: CSB649AC
- Material of Transistor: Si
- Polarity: PNP
- Maximum Collector Power Dissipation: 20 W
- Maximum Collector-Base Voltage: 180 V
- Maximum Collector-Emitter Voltage: 160 V
- Maximum Emitter-Base Voltage: 5 V
- Maximum Collector Current: 1.5 A
- Maximum Operating Junction Temperature: 150 °C
- Transition Frequency: 140 MHz
- Forward Current Transfer Ratio (hFE Value): 100
- Collector Capacitance: 27 pF
- Package: TO-126
- Noise Figure: -