CSB649C BJT

CSB649C CSB649C
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CSB649C BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: CSB649C
  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation: 20 W
  • Maximum Collector-Base Voltage: 180 V
  • Maximum Collector-Emitter Voltage: 120 V
  • Maximum Emitter-Base Voltage: 5 V
  • Maximum Collector Current: 1.5 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 140 MHz
  • Forward Current Transfer Ratio (hFE Value): 100
  • Collector Capacitance: 27 pF
  • Package: TO-126
  • Noise Figure: -

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