CSB737Q BJT

CSB737Q BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: CSB737Q
  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation: 0.25 W
  • Maximum Collector-Emitter Voltage: 40 V
  • Maximum Collector Current: 0.3 A
  • Transition Frequency: 100 MHz
  • Forward Current Transfer Ratio (hFE Value): 120
  • Package: TO-92
  • Noise Figure: -