CSB737S BJT
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CSB737S BJT Datasheet
- Type of Transistor: BJT
- Type Designator: CSB737S
- Material of Transistor: Si
- Polarity: PNP
- Maximum Collector Power Dissipation: 0.25 W
- Maximum Collector-Emitter Voltage: 40 V
- Maximum Collector Current: 0.3 A
- Transition Frequency: 100 MHz
- Forward Current Transfer Ratio (hFE Value): 270
- Package: TO-92
- Noise Figure: -