CSB764 BJT

CSB764 CSB764

CSB764 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: CSB764
  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation: 0.9 W
  • Maximum Collector-Base Voltage: 60 V
  • Maximum Collector-Emitter Voltage: 50 V
  • Maximum Emitter-Base Voltage: 5 V
  • Maximum Collector Current: 1 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 150 MHz
  • Forward Current Transfer Ratio (hFE Value): 60
  • Collector Capacitance: 20 pF
  • Package: TO-92L
  • Noise Figure: -