CSB817OF BJT

CSB817OF CSB817OF
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CSB817OF BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: CSB817OF
  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation: 90 W
  • Maximum Collector-Base Voltage: 160 V
  • Maximum Collector-Emitter Voltage: 140 V
  • Maximum Emitter-Base Voltage: 6 V
  • Maximum Collector Current: 12 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 15 MHz
  • Forward Current Transfer Ratio (hFE Value): 60
  • Collector Capacitance: 300 pF
  • Package: TO-3P
  • Noise Figure: -

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