CSB834 BJT

CSB834 CSB834
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CSB834 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: CSB834
  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation: 30 W
  • Maximum Collector-Base Voltage: 60 V
  • Maximum Collector-Emitter Voltage: 60 V
  • Maximum Emitter-Base Voltage: 7 V
  • Maximum Collector Current: 3 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 9 MHz
  • Forward Current Transfer Ratio (hFE Value): 60
  • Collector Capacitance: 150 pF
  • Package: TO-220
  • Noise Figure: -

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