CSB856A BJT

CSB856A CSB856A

CSB856A BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: CSB856A
  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation: 25 W
  • Maximum Collector-Base Voltage: 50 V
  • Maximum Collector-Emitter Voltage: 50 V
  • Maximum Emitter-Base Voltage: 4 V
  • Maximum Collector Current: 3 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 35 MHz
  • Forward Current Transfer Ratio (hFE Value): 35
  • Package: TO-220
  • Noise Figure: -