CSB856A BJT
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CSB856A BJT Datasheet
- Type of Transistor: BJT
- Type Designator: CSB856A
- Material of Transistor: Si
- Polarity: PNP
- Maximum Collector Power Dissipation: 25 W
- Maximum Collector-Base Voltage: 50 V
- Maximum Collector-Emitter Voltage: 50 V
- Maximum Emitter-Base Voltage: 4 V
- Maximum Collector Current: 3 A
- Maximum Operating Junction Temperature: 150 °C
- Transition Frequency: 35 MHz
- Forward Current Transfer Ratio (hFE Value): 35
- Package: TO-220
- Noise Figure: -