CSB857D BJT

CSB857D CSB857D

CSB857D BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: CSB857D
  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation: 40 W
  • Maximum Collector-Base Voltage: 70 V
  • Maximum Collector-Emitter Voltage: 50 V
  • Maximum Emitter-Base Voltage: 5 V
  • Maximum Collector Current: 4 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 15 MHz
  • Forward Current Transfer Ratio (hFE Value): 160
  • Package: TO-220
  • Noise Figure: -