CSB858C BJT

CSB858C CSB858C
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CSB858C BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: CSB858C
  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation: 40 W
  • Maximum Collector-Base Voltage: 70 V
  • Maximum Collector-Emitter Voltage: 60 V
  • Maximum Emitter-Base Voltage: 5 V
  • Maximum Collector Current: 4 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 15 MHz
  • Forward Current Transfer Ratio (hFE Value): 100
  • Package: TO-220
  • Noise Figure: -

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